• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Magnetic nanostructures fabricated by the atomic force microscopy nano-lithography technique
【24h】

Magnetic nanostructures fabricated by the atomic force microscopy nano-lithography technique

机译：通过原子力显微镜纳米光刻技术制备的磁性纳米结构

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A local oxidation technique using atomic force microscopy (AFM) was performed in order to modify magnetic domain structures in ferromagnetic nanostructures. Co-based nanostructures with a rectangular shape were fabricated by using electron beam lithography followed by AFM nano-oxidation. After fabricating a Co-oxide nanowire across a Co nanodot by AFM nano-oxidation, a domain structure of the dot observed before the nano-oxidation was divided into two parts of the domain. AFM nano-oxidation for a higher aspect ratio of height/width of the fabricated nanostructures was also investigated. By applying a do bias between an Al2O3/Ni double layer film and the AFM tip, the Ni layer was locally oxidized through the capped Al2O3 insulating layer. The nanowires of oxide obtained on the Al2O3/Ni double layer film were thicker and had a higher aspect ratio of height/width than those obtained on a Ni single layer film.
机译：为了修改铁磁纳米结构中的磁畴结构，进行了使用原子力显微镜（AFM）的局部氧化技术。通过使用电子束光刻，然后进行AFM纳米氧化，制造出具有矩形形状的Co基纳米结构。在通过AFM纳米氧化法跨Co纳米点制造Co-氧化物纳米线之后，在纳米氧化之前观察到的点的畴结构被分成畴的两个部分。还对制造的纳米结构的高/宽高比的AFM纳米氧化进行了研究。通过在Al2O3 / Ni双层膜和AFM尖端之间施加do偏压，Ni层通过覆盖的Al2O3绝缘层被局部氧化。与在Ni 2单层膜上获得的纳米线相比，在Al 2 O 3 / Ni双层膜上获得的氧化物纳米线更厚并且具有更高的纵横比。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号