The effects of chemical doping with F(4)TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique

Nosho Y; Ohno Y; Kishimoto S; Mizutani T

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The effects of chemical doping with F(4)TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique

机译：通过传输线模型技术研究了F（4）TCNQ化学掺杂对碳纳米管场效应晶体管的影响

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We have studied the effects of p-type chemical doping with F(4)TCNQ (tetrafluorotetracyano-p-quinodimethane) in carbon nanotube field-effect transistors (CNFETs). The transmission-line-model technique using multi-probe CNFETs has been employed to investigate the effects of chemical doping on the channel resistance and contact resistance. It has been found that chemical doping is effective in the reduction of the contact resistance as well as the channel resistance. The device performances of top-gate CNFETs such as transconductance, on-resistance, and on/ off ratio were improved by the F(4)TCNQ chemical doping on the access regions.

机译：我们已经研究了碳纳米管场效应晶体管（CNFET）中的F（4）TCNQ（四氟四氰基-p-喹二甲烷）对p型化学掺杂的影响。使用多探针CNFET的传输线模型技术已被用来研究化学掺杂对沟道电阻和接触电阻的影响。已经发现，化学掺杂在降低接触电阻以及沟道电阻方面是有效的。通过在访问区域上进行F（4）TCNQ化学掺杂，可以提高顶栅CNFET的器件性能，例如跨导，导通电阻和开/关比。

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《Nanotechnology》 |2007年第41期|共4页
作者
Nosho Y; Ohno Y; Kishimoto S; Mizutani T;
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正文语种 eng
中图分类一般工业技术;
关键词
PERFORMANCE; CONTACTS; METAL; DEVICES; CONDUCTION; TRANSPORT;

机译：性能;接触;金属;设备;导电;运输;

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1. The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique [J] . Y Nosho, Y Ohno, S Kishimoto Nanotechnology . 2007,第41期

机译：通过传输线模型技术研究了F4TCNQ化学掺杂对碳纳米管场效应晶体管的影响
2. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts [J] . Javey A, Tu R, Farmer DB, Nano letters . 2005,第2期

机译：具有化学掺杂触点的高性能n型碳纳米管场效应晶体管
3. Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material [J] . Xian XJ, Yan K, Zhou W, Nanotechnology . 2009,第50期

机译：使用TTF-TCNQ作为接触材料的单极p型单壁碳纳米管场效应晶体管
4. A Photoinduced Electrostatic Doping Effect in Carbon Nanotube Field-Effect Transistors [C] . Dexing Liu, Weihong Huang, Qinqi Ren, IEEE International Conference on Nanotechnology . 2021

机译：碳纳米管场效应晶体管中的光导静电掺杂效果
5. Electronic properties of carbon nanotubes studied in field-effect transistor geometries. [D] . Durkop, Tobias. 2004

机译：在场效应晶体管的几何形状中研究了碳纳米管的电子特性。
6. Carbon Nanotube Field-Effect Transistor-Based Chemical and Biological Sensors [O] . Xuesong Yao, Yalei Zhang, Wanlin Jin, 2021

机译：碳纳米管场效应晶体管基化学和生物传感器
7. Fabrication of n-type carbon nanotube field-effect transistors by Al doping [O] . Oh H, Kim JJ, Song W, 2014

机译：Al掺杂制备n型碳纳米管场效应晶体管
8. Proton Damage Effects on Carbon Nanotube Field-Effect Transistors [R] . Kemp, E R 2014

机译：质子损伤对碳纳米管场效应晶体管的影响

The effects of chemical doping with F(4)TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique

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