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Enhanced field emission from injector-like ZnO nanostructures with minimized screening effect

机译:注射器状ZnO纳米结构增强了场发射,屏蔽效果降至最低

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摘要

Injector-like zinc oxide (ZnO) nanostructures have been synthesized on Si substrate by the vapour phase transport method. Samples with different areal densities were obtained by controlling the temperature. The field emission properties of the injector-like ZnO nanostructures showed a clear dependence on the areal density of the nanostructures, which is due to the screening effect. The samples with a needle length of 850 nm and an areal density of 1 x 10(8) cm(-2) showed the lowest field emission turn-on field of 1.85 V mu m(-1) at a current density of 10 mu A cm(-2), and the current density reaches 1 mA cm(-2) at an applied field of 4.7 V mu m(-1).
机译:通过气相传输法已经在Si衬底上合成了注入型氧化锌(ZnO)纳米结构。通过控制温度获得具有不同面密度的样品。喷射器状ZnO纳米结构的场发射特性显示出对纳米结构面密度的明显依赖性,这是由于屏蔽效应所致。针长为850 nm,面密度为1 x 10(8)cm(-2)的样品在10μm的电流密度下显示出最低的1.85 Vμm(-1)场发射开启场一个cm(-2),在4.7 Vμm(-1)的施加电场下电流密度达到1 mA cm(-2)。

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