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Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

机译:还原剂和锗浓度对氧化硅基体中锗纳米晶体的生长和应力发展的影响

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Germanium (Ge) nanocrystals have been synthesized by annealing co-sputtered SiO2-Ge samples in N-2 or forming gas (90% N-2 + 10% H-2) at temperatures ranging from 700 to 1000 degrees C. We concluded that the annealing ambient, temperature and Ge concentration have a significant influence on the formation and evolution of the nanocrystals. We showed that a careful selective etching of the annealed samples in hydrofluoric acid solution enabled the embedded Ge nanocrystals to be liberated from the SiO2 matrix. From the Raman results of the as-grown and the liberated nanocrystals, we established that the nanocrystals generally experienced compressive stress in the oxide matrix and the evolution of these stress states was intimately linked to the distribution, density, size and quality of the Ge nanocrystals.
机译:通过在N-2中对共溅射的SiO2-Ge样品进行退火或在700至1000摄氏度的温度下形成气体(90%N-2 + 10%H-2)来合成锗(Ge)纳米晶体。退火环境,温度和锗浓度对纳米晶体的形成和演化有重要影响。我们表明,在氢氟酸溶液中对退火样品进行仔细的选择性蚀刻可以使嵌入的Ge纳米晶体从SiO2基质中释放出来。根据生长和释放的纳米晶体的拉曼结果,我们确定纳米晶体通常在氧化物基质中经受压应力,并且这些应力状态的演变与Ge纳米晶体的分布,密度,尺寸和质量密切相关。 。

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