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SWCNT growth on Al/Fe/Mo investigated by in situ mass spectroscopy

机译：原位质谱研究SWCNT在Al / Fe / Mo上的生长

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The effect of temperature on the growth of single-walled carbon nanotubes (SWCNTs) was investigated over the range of 725-900 deg C. A cold-wall reactor consisting of a heated stage (on which the substrate for SWCNT growth (Al/Fe/Mo) was placed) and a showerhead (from which C_2H_2 was introduced vertically into the reactor) was used for the growth. The heating was found to play two roles: (1) it generated complex hydrocarbon radicals during the growth process, as well as (2) promoting catalytic nanoparticles on the substrate during the annealing process. The optimum temperature for the highest SWCNT yield was found to be approx 860 deg C. For the first time, in situ mass spectroscopy was used to identify the growth precursors generated from thermal pyrolysis of C_2H_2 within this temperature range. The peak of the radicals found (C_6H_9, C_5H_9 and C_6H_(13)) and the highest catalyst support particle density (Fe catalyst supported on Al_xO_y) was correlated to the maximum yield of single walled carbon nanotubes at the optimum growth temperature of approx 860 deg C. Bottom gate SWCNT-FETs (single-walled carbon nanotube based field effect transistors) were fabricated showing a high transconductance of approx 0.12 mu S and on/off ratio of approx 10~5 which are both comparable to other state-of-the-art SWCNT-FET.
机译：在725-900摄氏度范围内研究了温度对单壁碳纳米管（SWCNTs）生长的影响。冷壁反应器由加热阶段组成（在该反应器上进行SWCNT生长的基底（Al / Fe放置），并使用喷头（从中将C_2H_2垂直引入到反应器中）进行生长。发现加热起到两个作用：（1）在生长过程中产生了复杂的烃基，以及（2）在退火过程中促进了基质上的催化纳米颗粒。发现最高SWCNT产率的最佳温度约为860℃。这是首次使用原位质谱法鉴定在此温度范围内C_2H_2热裂解产生的生长前体。发现的自由基峰（C_6H_9，C_5H_9和C_6H_（13））和最高的催化剂载体颗粒密度（Fe催化剂负载在Al_xO_y上）与单壁碳纳米管在约860度的最佳生长温度下的最大产率相关C.制造的底栅SWCNT-FET（基于单壁碳纳米管的场效应晶体管）显示出约0.12μS的高跨导和约10〜5的开/关比，均可以与其他状态媲美先进的SWCNT-FET。

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