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Aligned single-walled carbon nanotube patterns with nanoscale width, micron-scale length and controllable pitch

机译：具有纳米级宽度，微米级长度和可控制间距的对齐单壁碳纳米管图案

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摘要

We have successfully aligned single-walled carbon nanotubes (SWNTs) in patterns with nanoscale width, micron-scale length and controllable pitch on SiO2/Si substrates using a poly(dimethysiloxane) (PDMS) microchannel mold. The microchanneled mold was patterned with a funnel-shaped channel to minimize nanotube jamming during capillary-driven inflow. Two (i.e.pre- and post-capillary) gas blows were employed to improve nanotube alignment. The fluidically pre-aligned carbon nanotubes were 'gas-spun' into a long 20 nm wide pattern, significantly narrower than the fluidic pre-alignment channel. These narrow and long aligned SWNT patterns were successfully transferred to a pair of gold electrodes spaced 15 mu m apart. The performance of the carbon nanotube field effect transistor (CNTFET) fabricated by this technique was evaluated.
机译：我们已经成功地使用聚二甲基硅氧烷（PDMS）微通道模具在SiO2 / Si基板上以纳米级宽度，微米级长度和可控制间距的图案排列了单壁碳纳米管（SWNT）。用漏斗形通道对微通道模具进行图案化，以最大程度减少毛细管驱动的流入过程中纳米管的堵塞。使用两次（即毛细管前和毛细管后）吹气来改善纳米管排列。将流体预对准的碳纳米管“气纺”成20 nm长的图案，比流体预对准的通道明显窄。这些狭窄且长时排列的SWNT图案已成功转移到相距15微米的一对金电极上。评价了通过该技术制造的碳纳米管场效应晶体管（CNTFET）的性能。

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