Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor

Khade Ramdas P.; Sarkar Sujan; DasGupta AmitavaDasGupta Nandita

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Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor

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Kink effect is observed in Al 0.83In 0.17N/GaN high electron mobility transistor by measuring I D-V D S characteristics at a low sweep rate. It is inferred that the kink is induced due to the trapping/detrapping of charge carriers at deep levels present in the GaN buffer in the gate-drain access region. The detrapping of charge carriers from the deep levels is by the hot-electron-assisted mechanism. Two types of traps with activation energies, 0.29 eV (donor-like) and 0.57 eV (acceptor-like) were extracted by temperature-dependent transient drain current analysis. It is concluded that the deep-acceptor-like trap with a large emission time constant is responsible for the kink effect.

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来源
《Journal of Applied Physics》 |2021年第20期|205707-1-205707-8|共8页
作者
Khade Ramdas P.; Sarkar Sujan; DasGupta AmitavaDasGupta Nandita;
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作者单位

Indian Inst Technol Madras;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词
POWER; HEMTS; DEGRADATION;

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Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor

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