Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1-xN

Katsikini M.; Filintoglou K.; Pinakidou F.Pliatsikas N.Arvanitidis J.Christofilos D.Paloura E. C.Ves S.Reinholz U.Papadomanolaki E.Iliopoulos E.

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Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1-xN

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In-K-edge x-ray absorption fine structure (EXAFS), x-ray photoelectron, and Raman spectroscopy results are combined for a comprehensive study of InxGa1-xN layers with energy gaps extending over nearly the whole visible spectrum. The In-N and In-(In,Ga) distances determined by EXAFS are used for the derivation of the In-N bond ionicity as well as for the phonon frequency dependence of the LO and B 1 2 modes, assessed by Raman, and the N 1s, In 3d(5/2), Ga 3s, and Ga 2p(1/2) electron binding energies on those distances. Phonon confinement due to perturbation of the periodic potential caused by the alloying is also quantified.

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《Journal of Applied Physics》 |2021年第20期|205706-1-205706-9|共9页
作者
Katsikini M.; Filintoglou K.; Pinakidou F.Pliatsikas N.Arvanitidis J.Christofilos D.Paloura E. C.Ves S.Reinholz U.Papadomanolaki E.Iliopoulos E.;
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作者单位

Aristotle Univ Thessaloniki;

BAM Fed Inst Mat Res & Testing;

Univ Crete;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词
PHASE-SEPARATION; RAMAN-SCATTERING; INGAN; ALLOYS; FILMS; IMMISCIBILITY; EPITAXY; INDIUM; GAN;

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Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1-xN

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