Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

Wang Xiaorui; Wang Tao; Yu DapengXu Shijie

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Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

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Large negative thermal quenching (NTQ) of the yellow luminescence (YL) for a temperature increase from 5 to 300 K is observed in non-polar InGaN/GaN quantum well (QW) samples due to the thermal migration of carriers from the InGaN QW layers to the GaN barrier layers for the first time. Such an unusual phenomenon happens only when the carriers are optically excited inside the QW layers, providing solid evidence for the occurrence of thermal transfer of photoexcited carriers from the QW layers to the GaN barrier layers. A simple model considering the thermal transfer of carriers is proposed to interpret the observed NTQ phenomenon. The thermal activation energy of the carriers is determined by fitting the reciprocal temperature dependence of the YL intensity in the Arrhenius plot with the model. nbsp;Published under an exclusive license by AIP Publishing

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《Journal of Applied Physics》 |2021年第20期|205704-1-205704-6|共6页
作者
Wang Xiaorui; Wang Tao; Yu DapengXu Shijie;
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作者单位

Univ Hong Kong;

Univ Sheffield;

Southern Univ Sci & Technol;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
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PHOTOLUMINESCENCE; DOTS;

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Large negative thermal quenching of yellow luminescence in non-polar InGaN/GaN quantum wells

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