Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

Lew C. t. -k.; Sewani V. K.; Ohshima T.McCallum J. C.Johnson B. C.

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Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

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Silicon carbide (SiC) power devices are becoming central components in high voltage electronics. However, defects at interfaces and in the bulk continue to severely impact their reliability and performance. Here, we develop a charge pumping method to characterize SiC/SiO 2 interface defects in fully fabricated commercial SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs). The method is then used to address spin states at the SiC/SiO 2 interface via charge pumping electrically detected magnetic resonance (CP-EDMR). We apply these methods to investigate the power MOSFET after electron irradiation over a dose range of 10 (13) - 10( 17 )cm( - 2). We finally discuss CP-EDMR as a technique to interrogate spins during device operation for real-time monitoring of the device quality, performance, and degradation and as a probe for local magnetic fields.

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《Journal of Applied Physics》 |2023年第5期|055703-1-055703-7|共7页
作者
Lew C. t. -k.; Sewani V. K.; Ohshima T.McCallum J. C.Johnson B. C.;
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作者单位

Univ Melbourne;

Univ New South Wales;

Natl Inst Quantum Sci & TechnolRMIT Univ;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词
INTERFACE; READOUT; DENSITY; SPINS;

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Charge pumping electrically detected magnetic resonance of silicon carbide power transistors

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