...
机译:
Mitsubishi Electr Corp, R&D Dept, Itami, Hyogo 6648641, Japan;
Mitsubishi Electr Corp, Wafer Mfg Dept, Itami, Hyogo 6648641, Japan;
Osaka City Univ, Grad Sch Engn, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan;
ANOMALOUS-SCATTERING FACTORS; FRANZ-KELDYSH OSCILLATIONS; X-RAY; SEMICONDUCTOR SURFACES; GAN; RECOMBINATION; TRANSITIONS; PARAMETERS; INTERFACES; NITRIDES;
机译:Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy
机译:Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures
机译:Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
机译:surface photochemistry probed by two-photon photoemission spectroscopy