Electrical characterization and current transportation in metal/Dy2O3/Si structure

Chiu  FC

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Electrical characterization and current transportation in metal/Dy2O3/Si structure

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Metal-oxide-semiconductor capacitors incorporating Dy2O3 dielectric were fabricated and investigated. In this work, the electrical conduction mechanisms of 12 nm Dy2O3 thin films as functions of temperature were studied. The dominant conduction mechanisms of the Al/Dy2O3/p-Si metal-dysprosium oxide-semiconductor capacitor are the space-charge-limited current from 350 to 525 K and the Schottky emission from 300 to 325 K in the accumulation mode. Three different regions were observed in the current-density-voltage (J-V) characteristics at 350 K, namely, Ohm's law region, trap-filled-limited region, and Child's law region. The activation energy in Ohm's law region calculated from the Arrhenius plots is about 0.2 eV. This energy is attributed to shallow traps, distributed near the conduction band edge in the forbidden gap. The trap capture cross section is about 3.2x10(-21) cm(2). The electronic mobility, trap density, dielectric relaxation time, and density of states in conduction band were obtained from the space-charge-limited conduction at 350 K. (c) 2007 American Institute of Physics.

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《Journal of Applied Physics》 |2007年第4期|44116-1-44116-5-0|共5页
作者
Chiu FC;
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作者单位

Ming Chuan Univ, Dept Elect Engn, Tao Yuan 333, Taiwan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词
CHARGE-LIMITED CURRENTS; KAPPA GATE DIELECTRICS; OXIDES; DEPOSITION; DY2O3; GD2O3; SI;

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Electrical characterization and current transportation in metal/Dy2O3/Si structure

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