Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation

D. Skarlatos; C. Tsamis

首页> 外文期刊>Journal of Applied Physics >Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation

【24h】

Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation

机译：

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this work we develop a simple macroscopic model for the prediction of arsenic diffusion in silicon under low energy-high dose implantation conditions. Under these conditions, As-enhanced diffusion is attributed mainly to interstitial injection due to the formation of As-vacancy clusters. The basis of the model is the introduction of a bulk interstitial generation source from the entire As distribution, taking into account the difference between the chemical and active profiles of the dopant during drive-in annealing. The model has been introduced to the SYNOPSYS-TAURUS process simulator in order to simulate the results of an experiment especially designed for this purpose. Very satisfactory simulation results have been obtained, taking into account the simplicity of the model. Moreover, the model predicts, at least for short annealing times, the initial stage (trend) of the well-known arsenic uphill diffusion phenomenon at the native oxide/silicon interface.

著录项

来源
《Journal of Applied Physics》 |2007年第4期|043532.1-043532.9|共9页
作者
D. Skarlatos; C. Tsamis;
展开▼
作者单位

Institute of Microelectronics, NCSR Demokritos, 15310 Aghia Paraskevi, Athens, 15310 Greece;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;计量学;
关键词

相似文献

外文文献
中文文献

1. Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon [J] . Heemyong Park, Mark E. Law journal of applied physics . 1992,第8期

机译：Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
2. Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germaniumhyphen;rich regions of silicon [J] . Sheldon Aronowitz journal of applied physics . 1991,第7期

机译：Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germaniumhyphen;rich regions of silicon
3. Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon [J] . N. Lewis, G. Gildenblat, M. GhezzoW. KatzG. A. Smith applied physics letters . 1983,第2期

机译：Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon
4. Should tumor VEGF expression influence decisions on combining low-dose chemotherapy with antiangiogenic therapy? Preclinical modeling in ovarian cancer [O] . Leiby Benjamin, Alagkiozidis Ioannis, Zhang Lin, 2008

机译：should tumor VEGF expression influence decisions on combining low-dose chemotherapy with antiangiogenic therapy? preclinical modeling in ovarian cancer

Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation

摘要

著录项

相似文献

相关主题

期刊订阅