Depth resolved study of impurity sites in low energy ion implanted As in Si

dAcapito  F; Milita  S; Satta  AColombo  L

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Depth resolved study of impurity sites in low energy ion implanted As in Si

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An extended x-ray absorption fine structure investigation in depth-resolved mode allows us to identify the different sites of the arsenic along its concentration profile in shallow junctions, obtained by low energy arsenic implantation of silicon. In the deeper part of the sample, arsenic mainly occupies substitutional sites and vacancy-arsenic complexes are evidenced, whereas in the region close to the surface a mixed phase of arsenic aggregates and arsenic impurities is present. First principles calculations supporting the observations are presented. (c) 2007 American Institute of Physics.

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《Journal of Applied Physics》 |2007年第4期|43524-1-43524-5-0|共5页
作者
dAcapito F; Milita S; Satta AColombo L;
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作者单位

CNR, INFM, OGG, F-38043 Grenoble, France;

CNR, IMM SLACS, I-40129 Bologna, Italy;

Univ Cagliari, Cittadella Univ, CNR, INFM SLACS, I-09042 Monserrato, ItalyUniv Cagliari, Cittadella Univ, CNR, Dept Phys, I-09042 Monserrato, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词
ARSENIC-DOPED SILICON; ABSORPTION FINE-STRUCTURE; ENHANCED DIFFUSION; SHALLOW JUNCTIONS; ULTRALOW ENERGY; GILDA BEAMLINE; DEACTIVATION; PRECIPITATION; TEMPERATURE; SOLUBILITY;

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Depth resolved study of impurity sites in low energy ion implanted As in Si

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