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首页> 外文期刊>Journal of Applied Physics >Microstructure and electrical properties of (120)_(o)-oriented and of (001)_(o)-oriented epitaxial antiferroelectric PbZrO_(3) thin films on (100) SrTiO_(3) substrates covered with different oxide bottom electrodes
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Microstructure and electrical properties of (120)_(o)-oriented and of (001)_(o)-oriented epitaxial antiferroelectric PbZrO_(3) thin films on (100) SrTiO_(3) substrates covered with different oxide bottom electrodes

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摘要

Epitaxial antiferroelectric PbZrO_(3) (PZO) thin films of two different crystallographic orientationswere grown by pulsed laser deposition on (100)-oriented SrTiO_(3) single crystal substrates. The latter were covered either with SrRuO_(3) epitaxial bottom electrodes, or with an epitaxial BaZrO_(3) buffer layer and an epitaxial BaPbO_(3) bottom electrode, respectively. Their crystal orientation and microstructure were characterized by x-ray diffraction, transmission electron microscopy, and electron diffraction. The orthorhombic (index O) PZO films on SrRuO_(3)/SrTiO_(3) were predominantly (120)_(o) oriented and consisted of four azimuthal domains forming 90 deg and 60 deg boundaries, whereas those grown on BaPbO_(3)/BaZrO_(3)/SrTiO_(3) were (001)_(o) oriented. All films showed well-defined double P-E hysteresis loops, four distinct switching peaks in the current-voltage characteristics, and piezoelectric double loops recorded by piezoresponse scanning force microscopy. The values of the saturation polarization P_(S) and the critical field E_(C) of the (120)_(o)-oriented PZO films (P_(S)velence41 (mu)C/cm~(2); E_(C)velence445 kV/cm) are different from those of the (001)_(o)-oriented films (P_(S)velence24 (mu)C/cm~(2); E_(C)velence500 kV/cm). A transition temperature to the paraelectric phase of 260 deg C has been found, which is 30 K higher than the bulk value, probably indicating a stabilization of the antiferroelectric phase by substrate-induced strain.

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