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Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes

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摘要

A simple random ionization path length model is used to investigate the breakdown probabilities and jitter in single photon avalanche diodes (SPADs) with submicron multiplication widths. The simulation results show that increasing the multiplication width may not necessarily increase the breakdown probability relative to the breakdown voltage, as the effect of dead space becomes more dominant in thinner multiplication regions at realistic ionization threshold energies for GaAs. On the other hand, reducing the multiplication width results in smaller breakdown time and jitter, despite the increased dead space. The effect of dead space in degrading breakdown time and jitter is relatively weak and further compensated, by the stronger influence of large feedback ionization at high fields. Thus, SPAD designs that can minimize the dark count rate may potentially benefit from enhanced breakdown probability, breakdown time, and jitter by reducing the thickness of the multiplication region.

著录项

  • 来源
    《Journal of Applied Physics》 |2007年第4期|044506.1-044506.7|共9页
  • 作者

    S. L Tan; D. S. Ong; H. K. Yow;

  • 作者单位

    Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya,Selangor, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;计量学;
  • 关键词

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