Resonant photothermal bending spectroscopy at variable temperature 25-150 degrees C and its application to hydrogenated microcrystalline silicon films

Kunii T.; Mori K.; Kiriyama T.Kitao J.Yoshida N.Nonomura S.

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Resonant photothermal bending spectroscopy at variable temperature 25-150 degrees C and its application to hydrogenated microcrystalline silicon films

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Resonant photothermal bending spectroscopy (RPBS) at various measurement temperatures has been developed for estimating absorption coefficient (alpha) spectra of thin film semiconductors. The experimentally obtained sensitivity of RPBS was about ten times larger than nonresonant PBS. In vacuum, this technique has been applied to estimate the alpha spectrum of hydrogenated microcrystalline silicon (muc-Si:H) films at the measurement temperatures from 25 to 150 degreesC. It is demonstrated that the temperature coefficient of an indirect optical absorption at 1.2-1.8 eV caused by Si microcrystallite is almost the same as that of single crystalline silicon, and the temperature coefficient of below-gap absorption intensity is negative. The reason for the negative temperature coefficient and the energy level of the localized state resulting in the below gap absorption are discussed. (C) 2003 American Institute of Physics. References: 5

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《Review of Scientific Instruments》 |2003年第1期|881-883|共3页
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Kunii T.; Mori K.; Kiriyama T.Kitao J.Yoshida N.Nonomura S.;
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1. Hydrogenated microcrystalline silicon films produced at low temperature by the hot wire deposition method [J] . R. O. Dusane, Suvarna R. Dusane, V. G. BhideS. T. Kshirsagar applied physics letters . 1993,第16期

机译：Hydrogenated microcrystalline silicon films produced at low temperature by the hot wire deposition method
2. Amorphous and microcrystalline silicon deposited by hot-wire chemical vapor deposition at low substrate temperatures: application to devices and thin-film microelectromechanical systems [J] . J. P. Conde, P. Alpuim, M. BoucinhaJ. GasparV. Chu Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films . 2001,第2期

机译：Amorphous and microcrystalline silicon deposited by hot-wire chemical vapor deposition at low substrate temperatures: application to devices and thin-film microelectromechanical systems
3. OPTICAL MODULATION SPECTROSCOPY OF HYDROGENATED MICROCRYSTALLINE SILICON [J] . Cerqueira MF., Adriaenssens GJ., Ferreira JA.Jansen J. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films . 1997,第2期

机译：OPTICAL MODULATION SPECTROSCOPY OF HYDROGENATED MICROCRYSTALLINE SILICON
4. Evaluation of Temperature and Germanium Concentration Dependence of EXAFS Oscillations in Si-Rich Silicon Germanium Thin Films [C] . Kazutoshi Yoshioka, Ryo Yokogawa, Masato Koharada, Pacific Rim Meeting on Electrochemical and Solid-State Science . 2020

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5. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells [O] . Wang Fang-Hsing, Kuo Hsin-Hui, Yang Cheng-Fu, 2015

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Resonant photothermal bending spectroscopy at variable temperature 25-150 degrees C and its application to hydrogenated microcrystalline silicon films

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