Study of microstructure in SrTiO_3/Si by high-resolution transmission electron microscopy

G.Y. Yang; J.M. Finder; J. Wang

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Study of microstructure in SrTiO_3/Si by high-resolution transmission electron microscopy

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摘要

Microstructure in the SrTiO_3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO_3 grows heteroepitaxially on Si with the orientation relationship given by (001)_(STO)//(001)_(Si) and (100)_(STO)//(110)_(Si). The lattice misfit between the SrTiO_3 thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO_3. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2 X and 3 X Sr configurations. Structural defects in the SrTiO_3 thin film mainly consist of tilted domains and dislocations.

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《Journal of Materials Research》 |2002年第1期|204-213|共10页
作者
G.Y. Yang; J.M. Finder; J. Wang;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类工程材料学;
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Study of microstructure in SrTiO_3/Si by high-resolution transmission electron microscopy

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