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首页> 外文期刊>Journal of Applied Physics >Using pn junction depletion regions to position epitaxial nanowires
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Using pn junction depletion regions to position epitaxial nanowires

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Si nanowires were grown horizontally using the vapor-liquid-solid method from vertical {111} surfaces etched into a (110) Si substrate. The nanowires were catalyzed by negatively charged, citrate-stabilized, Au nanoparticles. The negative charge on the nanoparticles was used to position them along a positively charged depletion region formed by a pn junction. By positioning the nanoparticle catalysts, the epitaxial Si nanowires catalyzed by the nanoparticles were also positioned along this junction. The structure that best positioned the nanowires was highly doped n-type material on a lightly doped p-type substrate. Enhanced positioning of the nanowires was accomplished using a reverse bias across the pn junction. (C) 2007 American Institute of Physics.

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