Synthesis of silicon carbide films from partially oxidized polyvinylsilane by carbon tetrachloride solution casting

Masaki Narisawa; Takeshi Hasegawa; Kiyohito Okamura

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Synthesis of silicon carbide films from partially oxidized polyvinylsilane by carbon tetrachloride solution casting

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Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS solution. After the PVS films were peeled from the substrates, they were pyrolyzed at various temperatures. Spectroscopic studies of the pyrolyzed films up to 1273 K suggested that carbosilane (Si-CH_2-Si) structures are formed in the films at 473-673 K. The compositions of the amorphous films obtained at 1673 K were approximately SiC_(1.38)O_(0.21) and SiC_(1.41)O_(0.51), depending on the crosslinking conditions. The oxygen incorporated in the films was removed in the form of CO and SiO during further heating at 1673-1873 K. The compositions of the films were changed to approximately SiC_(1.25) and SiC_(1.26), respectively, at 2073 K. The films obtained at 1273 K did not show degradation during the oxidation at 1273-1673 K while a protective silica layer was formed on their surfaces.

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《Journal of Materials Research》 |2002年第1期|214-223|共10页
作者
Masaki Narisawa; Takeshi Hasegawa; Kiyohito Okamura;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
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Synthesis of silicon carbide films from partially oxidized polyvinylsilane by carbon tetrachloride solution casting

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