Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

Alexey E. Romanov; Erin C. Young; Feng WuAnurag TyagiChad S. GallinatShuji NakamuraSteve P. DenBaarsJames S. Speck

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Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

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This article presents a theoretical analysis of dislocation behavior and stress relaxation in semipolar III-nitride heteroepitaxy, e.g., for Al_(x)Ga_(1-x)N and In_(y)Ga_(1-y)N layers grown on {hh2hm}- or {h0hm}-type semipolar planes of GaN substrates. We demonstrate that the shear stresses on the unique inclined basal (0001) plane do not vanish for such growth geometries. This leads to the onset of relaxation processes in semipolar III-nitride heterostructures via dislocation glide in the basal slip systems (0001) and to the formation of misfit dislocations (MDs) with Burgers vectors of (a/3)-type at the semipolar heterointerface. Next we calculate the Matthews-Blakeslee critical thickness for MD formation in semipolar III-nitride layers together with the MD equilibrium spacings for complete misfit relaxation. The component of the MD Burgers vector normal to the film/substrate interface will cause a crystal lattice tilt in the epilayer with respect to the GaN substrate. The calculated magnitudes of the tilt angles are 0.62 deg and 0.67 deg for Al_(x)Ga_(1-x)N and In_(y)Ga_(1-y)N alloys with compositions of x(velence)0.20 and y(velence)0.07, respectively, grown in the (1122) semipolar orientation. The modeling results are discussed in light of recent experimental observations A. Tyagi et al., Appl Phys. Lett. 95, 251905 (2009); E. Young et al., Appl. Phys. Express 3, 011004 (2010); and F. Wu et al., J. Appl. Phys. 109, 033505 (2011) of MDs and crystal lattice tilt in semipolar III-nitride heteroepitaxial layers.

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《Journal of Applied Physics》 |2011年第10期|103522-1-103522-12|共12页
作者
Alexey E. Romanov; Erin C. Young; Feng WuAnurag TyagiChad S. GallinatShuji NakamuraSteve P. DenBaarsJames S. Speck;
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作者单位

Materials Department, University of California, Santa Barbara, California 93106, USA;

Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类应用物理学;
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Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

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