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首页> 外文期刊>Journal of Applied Physics >Structural and magnetotransport properties of ultrathin Co/ZnO and Co/ZnAlO films
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Structural and magnetotransport properties of ultrathin Co/ZnO and Co/ZnAlO films

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摘要

We report the structural and magnetotransport properties of ultrathin superparamagnetic Co/ZnO and Co/ZnAlO films deposited by sequentially sputtering Co layers and semiconductor layers. The films consisting of Co nanodots embedded in an amorphous semiconductor matrix exhibit large room temperature tunneling magnetoresistance with a maximum value of over 7. The single-layer-nanodot structures gradually develop in the films with thicknesses below 8 nm, where tunneling processes existing only between nanodots that lie in a plane are realized. The tunneling magnetoresistance ratio at room temperature is as high as 5 although the thickness of the Co/ZnAlO film is as thin as 3.2 nm. These single-layer-nanodot films having high tunneling magnetoresistance ratios and superparamagnetic behavior can be used in transparent nano-granular in gap sensors.

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  • 来源
    《Journal of Applied Physics》 |2014年第23期|233908-1-233908-5|共5页
  • 作者

    Zhi-Yong Quan; Xian-Peng Zhang; Wei LiuH. B. AlbargiG. A. GehringXiao-Hong Xu;

  • 作者单位

    Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, China;

    Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
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