Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

Takashi Kita; Masaya Suwa; Toshiyuki KaizuYukihiro Harada

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Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

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摘要

The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n~+-GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the 001 transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarization sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the 110 waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the -110 waveguide is easily achieved even if the stacking is relatively low, although the gain is small.

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《Journal of Applied Physics》 |2014年第23期|233512-1-233512-5|共5页
作者
Takashi Kita; Masaya Suwa; Toshiyuki KaizuYukihiro Harada;
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作者单位

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
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Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

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