Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

Yujue Yang; Junxi Wang; Jinmin LiYiping Zeng

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Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

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The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

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来源
《Journal of Applied Physics》 |2014年第23期|233102-1-233102-7|共7页
作者
Yujue Yang; Junxi Wang; Jinmin LiYiping Zeng;
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作者单位

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
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Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

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