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Spectroscopic analysis of H_2/CH_4 microwave plasma and fast growth rate of diamond single crystal

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摘要

One of the best ways to increase the diamond growth rate is to couple high microwave power to the plasma. Indeed, increasing the power density leads to increase gas temperature the atomic hydrogen density in the plasma bulk, and to produce more hydrogen and methyl at the diamond surface. Experimental and numerical approaches were used to study the microwave plasma under high power densities conditions. Gas temperature was measured by optical emission spectroscopy and H-atom density using actinometry. CH_3-radical density was obtained using a 1D model that describes temperatures and plasma composition from the substrate to the top of the reactor. The results show that gas temperature in the plasma bulk, atomic hydrogen, and methyl densities at the diamond surface highly increase with the power density. As a consequence, measurements have shown that diamond growth rate also increases. At very high power density, we measured a growth rate of 40 μm/h with an H-atom density of 5 × 10~(17) cm~(-3) which corresponds to a H_2 dissociation rate higher than 50. Finally, we have shown that the growth rate can be framed between a lower and an upper limit as a function depending only on the maximum of H-atom density measured or calculated in the plasma bulk. The results also demonstrated that increasing fresh CH_4 by an appropriate injection into the boundary layer is a potential way to increase the diamond growth rates.

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  • 来源
    《Journal of Applied Physics》 |2014年第23期|233301-1-233301-8|共8页
  • 作者

    N. Derkaoui; C. Rond; K. HassouniA. Gicquel;

  • 作者单位

    Laboratoire des Sciences des Procedes et des Materiaux (LSPM), UPR3407 CNRS, Universite Paris 13, 99 Avenue Jean Baptiste Clement, 93430 Villetaneuse, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
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