Metallic behavior and negative differential resistance properties of (InAs)_n (n = 2 - 4) molecule cluster junctions via a combined non-equilibrium Green's function and density functional theory study

Qi Wang; Jianbing Zhang; Rong LiYuanlan XuXiangshui MiaoDaoli Zhang

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Metallic behavior and negative differential resistance properties of (InAs)_n (n = 2 - 4) molecule cluster junctions via a combined non-equilibrium Green's function and density functional theory study

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In this present work, the geometric structures and electronic transport properties of (InAs)_n (n = 2, 3, 4) molecule cluster junctions are comparatively investigated using NEGF combined with DFT. Results indicate that all (InAs)_n molecule cluster junctions present metallic behavior at the low applied biases (-2V, 2V), while NDR appears at a certain high bias range. Our calculation shows that the current of (InAs)_4 molecule cluster-based junction is almost the largest at any bias. The mechanisms of the current-voltage characteristics of all the three molecule cluster junctions are proposed.

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《Journal of Applied Physics》 |2014年第23期|233712-1-233712-6|共6页
作者
Qi Wang; Jianbing Zhang; Rong LiYuanlan XuXiangshui MiaoDaoli Zhang;
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作者单位

School of Optical and Electronic Information, Huazhong University of Science and Technology, No. 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, People's Republic of China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类应用物理学;
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Metallic behavior and negative differential resistance properties of (InAs)_n (n = 2 - 4) molecule cluster junctions via a combined non-equilibrium Green's function and density functional theory study

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