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外文期刊>Journal of Applied Physics
>Comparison of SiO_(2), Si_(3)N_(4), As_(2)S_(3), and Ge_(0.25)Se_(0.75) dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides
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Comparison of SiO_(2), Si_(3)N_(4), As_(2)S_(3), and Ge_(0.25)Se_(0.75) dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides
We present in this paper a direct comparison of the optical properties of InP- and GaAs-based quantum cascade laser waveguides operating in the midinfrared wavelength range. The absorption loss and optical confinement were calculated using a two-dimensional electromagnetic finite-element method. The effect on the waveguide properties of SiO_(2), Si_(3)N_(4), As_(2)S_(3), and Ge_(0.25)Se_(0.75) used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance.
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