Optimum growth conditions and near band-edge photoluminescence of high quality ZnS/GaAs(100) epilayers

Nam S.; Yu YM.; O B.Lee KS.Choi YD.Rhee J.

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Optimum growth conditions and near band-edge photoluminescence of high quality ZnS/GaAs(100) epilayers

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High quality ZnS epilayers were grown on GaAs( 100) substrate by hot wall epitaxy. The optimum growth conditions for high quality ZnS epilayer were found. Near band-edge photoluminescence (PL) spectrum of high quality ZnS epilayers showed sharp and narrow exciton peaks and no self-activated peaks. The room temperature energy gap of ZnS /GaAs was found to be 3.729 eV from the experimentally observed free exciton PL peaks, The existence of the free exciton at room temperature reveals that the crystallinity of ZnS epilayers is excellent. The crystallinity became better with the increasing epilayer thickness according to the result of PL and the double crystal rocking curve. The temperature dependence of the PL linewidth broadening was analyzed in terms of exciton scattering process. From the splitting of the heavy hole and the light hole exciton peaks, the strain was identified. (C) 1998 Elsevier Science S.A. All rights reserved. References: 18

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《Materials Chemistry and Physics》 |1998年第3期|229-234|共6页
作者
Nam S.; Yu YM.; O B.Lee KS.Choi YD.Rhee J.;
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作者单位

Mokwon Univ, Dept Phys, Chung Ku, 24 Mok Dong, Taejon 301729, South Korea.;

bh.med.kyoto-u.ac.jp;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
关键词
Hot wall epitaxy; Zns epilayer; Optimum growth conditions; Photoluminescence; Room temperature energy gap; Molecular-beam epitaxy; Znse-zns superlattices; Hot-wall epitaxy; Emissions; Films;

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1. Temperature dependence of the band-edge exciton of a Zn_0.88Mg_0.12S_0.18Se_0.82 epilayer on GaAs [J] . H J Chent, D Y Lin, Y S Huang Semiconductor Science and Technology . 1999,第1期

机译：Temperature dependence of the band-edge exciton of a Zn_0.88Mg_0.12S_0.18Se_0.82 epilayer on GaAs
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3. Band-edge photoluminescence of AlN epilayers [J] . J. Li, K. B. Nam, M. L. NakarmiJ. Y. LinH. X. Jiang Applied physics letters . 2002,第18期

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4. ZnSe/GaAs(100) thin layers ZnS-ZnSe-ZnS/GaAs(100) single quantum well structures and ZnS/ZnSe/GaAs(100) superlattices grown by photoassisted VPE [C] . Alexander V. Kovalenko, Dnepropetrovskiy State Univ., Dnepropetrovsk, Optoelectronic Integrated Circuit Materials, Physics, and Devices . 1995

机译：ZnSe / GaAs（100）薄层ZnS-ZnSe-ZnS / GaAs（100）单量子阱结构和光辅助VPE生长的ZnS / ZnSe / GaAs（100）超晶格

Optimum growth conditions and near band-edge photoluminescence of high quality ZnS/GaAs(100) epilayers

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