Yttrium doping behavior in BaTiO3 ceramics at different sintered temperature

Qi HQ.; Li LT.; Wang YL.Fan YW.Gui ZL.

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Yttrium doping behavior in BaTiO3 ceramics at different sintered temperature

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The doping behaviors of Y-doped BaTiO3 ceramics comparing with that of undoped one at different sintering temperature were studied. Sintering at low temperature, yttrium preferably occupies Ti-site; with the sintering temperature rise, it tends to occupy Ba-site and act as donor. The dense and semiconducting ceramics of Y-doped BaTiO3 can be obtained when the sintering temperature above 1250 degreesC. Sintered at 1250 degreesC results in the sample with the maximum of lattice parameters for the minimum vacancy concentration. (C) 2003 Elsevier B.V. All rights reserved. References: 11

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《Materials Chemistry and Physics》 |2003年第2期|423-427|共5页
作者
Qi HQ.; Li LT.; Wang YL.Fan YW.Gui ZL.;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
Yttrium; Batio3; Sintering; Defect; Ptcr;

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Yttrium doping behavior in BaTiO3 ceramics at different sintered temperature

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