High-incident photon-to-current conversion efficiency by sulfurization of wide-band gap metal oxides

Sirimanne PM.; Sakata T.

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High-incident photon-to-current conversion efficiency by sulfurization of wide-band gap metal oxides

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Sulfurization of some wide-band gap metal oxides forms photoactive sulfides on metal oxide electrodes. Very high-incident photon-to-current conversion efficiencies are achieved on In2S3/In2O3, Bi2S3/Bi2O3, and MgIn2S4/MgIn2O4 electrodes in a polysulfide electrolyte. Semiconductor sensitization is responsible for the generation of the photocurrent on those electrodes. A semiconductor sensitization process was not observed on ZnS/ZnO electrodes. Different kinetics at the semiconductor/semiconductor interface are the reasons for the observed difference of the incident photon-to-current conversion efficiency, for the electrodes. (C) 2003 Elsevier B.V. All rights reserved. References: 17

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《Materials Chemistry and Physics》 |2003年第2期|466-470|共5页
作者
Sirimanne PM.; Sakata T.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
Wide-band gap metal oxides; Sulfurization; Micro-crystals of sulfides; Semiconductor sensitization; Tio2 electrodes; Photoelectrochemical behavior; Films; In2s3; Cds;

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High-incident photon-to-current conversion efficiency by sulfurization of wide-band gap metal oxides

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