Evaluation of the growth condition of chemical vapour deposition diamond under fluorine addition

Wan YZ.; Liu ZJ.; Zhang JY.Wang JT.Zhang DW.

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Evaluation of the growth condition of chemical vapour deposition diamond under fluorine addition

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Effects of fluorine addition on the growth conditions of chemical vapour deposition (CVD) diamond are discussed in the Light of thermodynamics. Phase diagrams in the C-H-F system for low-pressure diamond growth are calculated in the usual conditions: 0.1-6.67 kPa, 900-1100 K. The effects of substrate temperature and fluorine addition on the diamond growth region are explored. From these phase diagrams, we find that the diamond growth region is small and near the CH4-HF line at low temperature; it gradually moves to the H-HF line with increasing temperature. (C) 1998 Elsevier Science S.A. All rights reserved. References: 18

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来源
《Materials Chemistry and Physics》 |1998年第3期|275-279|共5页
作者
Wan YZ.; Liu ZJ.; Zhang JY.Wang JT.Zhang DW.;
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作者单位

Fudan Univ, Dept Elect Engn, CVD Lab, Shanghai 200433, Peoples R China, .;

bh.med.kyoto-u.ac.jp;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
关键词
Chemical vapour deposition; Diamond; Phase diagrams; Fluorine; Microwave-plasma; Films; Hydrogen; Carbon;

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Evaluation of the growth condition of chemical vapour deposition diamond under fluorine addition

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