Abnormal growth of lead titanate thin film in chemical vapor deposition of Pb(C2H5)(4)/Ti(OPri)(4)/O-2

Pan CY.; Hong LS.; Tsai DS.

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Abnormal growth of lead titanate thin film in chemical vapor deposition of Pb(C2H5)(4)/Ti(OPri)(4)/O-2

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The kinetic and equilibrium aspects in growing lead titanate thin film, using the reaction system Pb(C2H5)(4)/Ti(OPr ')(4)/O-2/N-2, are investigated in a cold-wall reactor. especially those related to its abnormal growth on silicon oxide. Equilibrium calculations indicate that volatility of Pb-species is much higher than that of Ti-species. therefore. its concentrations in the gas phase are higher by several orders of magnitudes. Studies on PbO, TiO2. and PbTiO3 growth show that Pb- and Ti-species deposit quite differently, and exhibit little interference with each other when deposited together. The activation energy for PbO deposition is estimated to be 32.1 kcal mol(-1). while that for TiO2 deposition is 6.4 kcal mol(-1). Abnormal structures are found on PbO and PbTiO3 films but not on TiO2 films. The key factor in controlling film composition and abnormal structure formation is the preferential deposition of Pb-species on lead titanate over silica surface. (C) 2001 Elsevier Science B.V. All rights reserved. References: 26

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《Materials Chemistry and Physics》 |2001年第2期|223-230|共8页
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Pan CY.; Hong LS.; Tsai DS.;
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Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan, .;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类工程材料学;工程基础科学;
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1. In situ growth of highly oriented Pb(Zr↓(0.5)Ti↓(0.5))O↓(3) thin films by low-temperature metal-organic chemical vapor deposition [J] . G.-R. Bai, l-Fei Tsu, A. Wang Applied physics letters . 1998,第18期

机译：In situ growth of highly oriented Pb(Zr↓(0.5)Ti↓(0.5))O↓(3) thin films by low-temperature metal-organic chemical vapor deposition
2. Lead zirconate titanate thin films on ruthenium dioxide; in situ synthesis using organometallic chemical vapor deposition [J] . M. de Keijser, G.J. M. Dormans, P.J. van Veldhoven Integrated Ferroelectrics . 1994,第3期

机译：Lead zirconate titanate thin films on ruthenium dioxide; in situ synthesis using organometallic chemical vapor deposition
3. Lanthanumhyphen;modified lead titanate thin film formed by lowhyphen;temperature chemical vapor deposition and subsequent annealing [J] . Shunji Watanabe, Takamitsu Fujiu, Akira Tanaka applied physics letters . 1993,第25期

机译：Lanthanumhyphen;modified lead titanate thin film formed by lowhyphen;temperature chemical vapor deposition and subsequent annealing

Abnormal growth of lead titanate thin film in chemical vapor deposition of Pb(C2H5)(4)/Ti(OPri)(4)/O-2

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