首页> 外文期刊>RSC Advances >Synthesis and up/down conversion luminescence properties of Na0.5R0.5MoO4:Ln(3+) (R3+ = La, Gd), ( Ln(3+) = Eu, Tb, Dy, Yb/Er) thin phosphor films grown by pulsed laser deposition technique
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Synthesis and up/down conversion luminescence properties of Na0.5R0.5MoO4:Ln(3+) (R3+ = La, Gd), ( Ln(3+) = Eu, Tb, Dy, Yb/Er) thin phosphor films grown by pulsed laser deposition technique

机译:Na0.5R0.5MoO4:Ln(3+)(R3 + = La,Gd),(Ln(3+)= Eu,Tb,Dy,Yb / Er)薄膜荧光粉的合成和上/下转换发光特性脉冲激光沉积技术

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摘要

Single crystalline nano thin phosphor films of (Na0.5R0.5)MoO4:Ln(3+) (R3+ = La, Gd), (Ln(3+) = Eu, Tb, Dy, Yb/Er) have been deposited on quartz substrates by pulsed laser deposition (PLD) technique. In this work, we clearly explained the target preparation, pre-deposition cleaning of substrates using piranha cleaning, and optimized growth conditions of the thin films. The deposition was carried out using an Nd-YAG laser (lambda = 1064 nm) in an ultra-high vacuum (UHV) with an oxygen back pressure of 300 mTorr at different substrate temperatures. To examine the crystal structure, 3D surface topography and film thickness, the as-deposited samples were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM), respectively. The thin phosphor films possess a scheelite tetragonal crystal structure with the space group I4(1)/a. The down-conversion luminescence properties of Eu3+, Tb3+, Dy3+ doped (Na0.5R0.5)MoO4 phosphor films were studied in detail. Under 980 nm NIR laser excitation, the Yb3+/Er3+ doped (Na0.5R0.5)MoO4 thin films show intense up-converted green emission identified at 524 nm due to the transition from the populated H-2(11/2) level to I-4(15/2) ground level of the erbium ion. The fluorescence decay time for the major transitions in (Na0.5R0.5) MoO4 when doped with Eu3+ (D-5(0) -> F-7(2)), Tb3+ (D-5(4) -> F-7(5)), Dy3+ (F-4(9/2) -> H-6(13/2)) and Yb3+/Er3+ (H-2(11/2) -> I-4(15/2)) are determined and to assess the color richness, the CIE color coordinates were also calculated. The obtained results suggested that the potential (Na0.5R0.5) MoO4:Ln(3+) thin phosphor films can serve as an excellent material for electro/cathodo-luminescence and display applications.
机译:(Na0.5R0.5)MoO4:Ln(3+)(R3 + = La,Gd),(Ln(3+)= Eu,Tb,Dy,Yb / Er)的单晶纳米薄膜材料已沉积在其上石英基板通过脉冲激光沉积(PLD)技术。在这项工作中,我们清楚地说明了目标制备,使用食人鱼清洁剂对基材进行预沉积清洁以及优化的薄膜生长条件。使用Nd-YAG激光(λ= 1064 nm)在超高真空(UHV)中以300 mTorr的氧气背压在不同的基板温度下进行沉积。为了检查晶体结构,3D表面形貌和膜厚,分别通过X射线衍射(XRD),原子力显微镜(AFM)和扫描电子显微镜(SEM)对沉积后的样品进行了表征。荧光体薄膜具有空间群为I4(1)/ a的白钨矿四方晶体结构。详细研究了Eu3 +,Tb3 +,Dy3 +掺杂(Na0.5R0.5)MoO4荧光粉薄膜的下转换发光特性。在980 nm NIR激光激发下,Yb3 + / Er3 +掺杂(Na0.5R0.5)MoO4薄膜在524 nm处表现出强烈的上转换绿色发射,这是由于从人口密集的H-2(11/2)跃迁至-4离子的I-4(15/2)地平面。当掺杂Eu3 +(D-5(0)-> F-7(2)),Tb3 +(D-5(4)-> F-时,(Na0.5R0.5)MoO4中主要跃迁的荧光衰减时间7(5)),Dy3 +(F-4(9/2)-> H-6(13/2))和Yb3 + / Er3 +(H-2(11/2)-> I-4(15/2)确定并评估色彩丰富度,还计算了CIE色彩坐标。获得的结果表明,潜在的(Na0.5R0.5)MoO4:Ln(3+)荧光粉薄膜可以用作电/阴极发光和显示应用的优秀材料。

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