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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Ion beam degradation analysis of poly(3-hexylthiophene) (P3HT): can cryo-FIB minimize irradiation damage?
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Ion beam degradation analysis of poly(3-hexylthiophene) (P3HT): can cryo-FIB minimize irradiation damage?

机译:聚(3-己基噻吩)(P3HT)的离子束降解分析:cryo-FIB可以最大程度地减少辐射损伤吗?

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摘要

In this study, to assess the influence of the temperature on the ion beam degradation, irradiation experiments on organic semiconductor materials were performed for both cryogenic and room temperature conditions. Thin P3HT films on silicon substrates were exposed to increasing ion doses in dual beam FIB. The degradation behaviour by means of a decrease in the C=C band which corresponds to a loss of conjugation was investigated by means of Raman spectroscopy. In addition, atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) were used for a characterization of morphology and surface potential which provide information on temperature and ion dose dependent degradation behaviour.
机译:在这项研究中,为了评估温度对离子束降解的影响,在低温和室温条件下对有机半导体材料进行了辐照实验。硅基板上的P3HT薄膜在双束FIB中暴露于增加的离子剂量下。通过拉曼光谱研究了通过降低C = C带(对应于共轭损失)的降解行为。此外,原子力显微镜(AFM)和开尔文探针力显微镜(KPFM)用于表征形貌和表面电势,从而提供有关温度和离子剂量依赖性降解行为的信息。

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