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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Thin oxide breakdown mechanism of constant voltage stress on MOSFETs
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Thin oxide breakdown mechanism of constant voltage stress on MOSFETs

机译：MOSFET上恒定电压应力的薄氧化物击穿机理

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The breakdown mechanism of constant-voltage stress in MOSFETs has been investigated. The results show that the transient evolution of stress current dominates the breakdown mechanism of the thin oxide. Due to the stress current decreasing with time induced by trapped charges, the trapped charge increases with stress time, i.e. proportional to T-s(0.4). As the results indicate, the relation between trapped charges and time-to-breakdown, the trapped charge generation rate could be obtained. By investigating stress-induced degradations, the impacts of positive constant voltage stress and negative constant voltage stress for device degradation are also analyzed and compared. [References: 11]
机译：研究了MOSFET中恒定电压应力的击穿机理。结果表明，应力电流的瞬态演化支配着薄氧化物的击穿机理。由于由捕获的电荷引起的应力电流随时间减小，所以捕获的电荷随应力时间而增加，即与T-s（0.4）成比例。结果表明，俘获电荷与击穿时间之间的关系可以得到俘获电荷的产生率。通过研究应力引起的退化，还分析和比较了正恒定电压应力和负恒定电压应力对器件退化的影响。 [参考：11]

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