Growth of GaSb dots on GaAs(100) by droplet epitaxy

Takuya Kawazu; Takaaki Mario; Takeshi Noda; Yoshihiro Akiyama; Hiroyuki Sakaki

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Growth of GaSb dots on GaAs(100) by droplet epitaxy

机译：液滴外延在GaAs（100）上生长GaSb点

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We have studied the growth of GaSb quantum dots(QDs)on GaAs by dropiet epitaxy,Past ge throplats ard fomned on GaAs and them exposed Sb fhnx to clad by large grannlar cryxald Sb by attaening this wafer pt 380~0C GaSb QDsarc soccessfolly formed By atomic force microscopic stedies it is found that GaSb QDs thus formed are on average 9.2 nmin height, 74 = in diameter, and 7.8 X 109 cm2 in density.Photoluminescence properties of these Qbs have been alsoinvestigated.

机译：我们研究了通过滴滴外延生长在GaAs上的GaSb量子点（QDs），在GaAs上形成的膏药和通过将大分子晶状体Sb附着在380〜0C晶片上使Sb fhnx暴露于大颗粒晶状体Sb的过程。原子力显微镜研究发现，如此形成的GaSb QD平均高度为9.2 nm，直径为74 =，密度为7.8 X 109 cm2。还研究了这些Qb的光致发光特性。

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《Physica status solidi, B. Basic research》 |2009年第4期|共3页
作者
Takuya Kawazu; Takaaki Mario; Takeshi Noda; Yoshihiro Akiyama; Hiroyuki Sakaki;
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正文语种 eng
中图分类固体物理学;
关键词
Photoluminescence; quantum; epitaxy;

机译：光致发光;量子;外延;

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专利

1. Two different growth modes of GaSb dots on GaAs(100) by droplet epitaxy [J] . Takuya Kawazu, Takaaki Mano, Takeshi Noda, Journal of Crystal Growth . 2009,第8期

机译：液滴外延在GaAs（100）上GaSb点的两种不同生长方式
2. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy [J] . T. Kawazu, T. Noda, Y. Sakuma, AIP Advances . 2016,第4期

机译：液滴外延生长GaAs中GaSb II型量子点光致发光光谱的激发功率依赖性
3. Effects of Sb/As Interdiffusion on Optical Anisotropy of GaSb Quantum Dots in GaAs Grown by Droplet Epitaxy [J] . Takuya Kawazu, Takeshi Noda, Takaaki Mano, Japanese journal of applied physics . 2012,第11Issue1期

机译：Sb / As互扩散对液滴外延生长GaAs中GaSb量子点光学各向异性的影响
4. Growth of GaSb dots nucleation layer and thin-film GaSb on Si(100) substrate by molecular beam epitaxy [C] . Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：通过分子束外延生长在Si（100）衬底上生长GaSb点成核层和薄膜GaSb
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature [O] . Mohamed Benyoucef, Verena Zuerbig, Johann Peter Reithmaier, 2012

机译：高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
7. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy [O] . T. Kawazu, T. Noda, Y. Sakuma, 2016

机译：液滴外延生长Gaas中GasbⅡ型量子点光致发光谱的激发功率依赖性

Growth of GaSb dots on GaAs(100) by droplet epitaxy

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