Ion sputtering with low energy ions at normal angle of incidence represents an alternative method for the self-organized formation of semiconductor quantum dots. Dot patterns are formed spontaneously on GaSb and InSb surfaces during sputtering and exhibit a uniform size distribution and a long-range hexagonal ordering. The diameter of the fabricated dots ranges from 15-80 nm with an aspect ratio of nearly unity and with dot densities of 3 x 10(11) to 1 x 10(10) cm(-2). The size and density of the dots can be controlled separately by sputtering time and ion energy, respectively. GaSb quantum dots are prepared by this method through sputtering of GaSb layers in a multilayer sample down to the interface. Numerical integration of the Kuramoto-Sivashinsky equation which describes in a continuum model the dot formation are compared to the experimental findings. [References: 9]
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机译：以低能量离子以垂直入射角进行离子溅射是半导体量子点自组织形成的另一种方法。在溅射过程中，GaSb和InSb表面会自发形成点图形，并显示出均匀的尺寸分布和长距离的六边形排列。制成的点的直径范围为15-80 nm，长径比几乎为1，点密度为3 x 10（11）到1 x 10（10）cm（-2）。点的大小和密度可以分别通过溅射时间和离子能量分别控制。通过该方法，通过溅射多层样品中的GaSb层直至界面，可以制备GaSb量子点。将在连续模型中描述点形成的Kuramoto-Sivashinsky方程的数值积分与实验结果进行了比较。 [参考：9]
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