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首页> 外文期刊>Physica status solidi, B. Basic research >Slow mode degradation mechanism of ZnSe based white LEDs
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Slow mode degradation mechanism of ZnSe based white LEDs

机译：ZnSe基白色LED的慢模降解机理

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This paper presents slow mode degradation mechanism of ZnSe-based white LEDs, which is induced by point defect. The white LEDs are very high quality devices, of which the optical power at a forward current of 20 mA is 8.3 mW and the luminous efficiency is 28 lm/W, which is comparable to GaN-based white LEDs in the market. It is proven that microscopic point defects in the devices, detected as deep hole traps of the HI center (E-v + 0.6 eV) and H0 center (E-v + 0.8 eV) in p-type ZnMgSSe cladding. layer, are responsible for the slow-mode degradation. These point defects, related to nitrogen complex centers, are very electrically active under device operation. An important insight of the H0 center are found that the mobility of the defect is extremely high, and then it induces marked interaction with macroscopic defects. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. [References: 14]
机译：本文提出了由点缺陷引起的ZnSe基白色LED的慢模式退化机理。白光LED是非常高质量的设备，其正向电流为20 mA时的光功率为8.3 mW，发光效率为28 lm / W，可与市场上基于GaN的白光LED相媲美。事实证明，在p型ZnMgSSe覆层中，器件的微观点缺陷被检测为HI中心（E-v + 0.6 eV）和H0中心（E-v + 0.8 eV）的深孔陷阱。层，负责慢模式降级。这些与氮络合物中心有关的点缺陷在器件操作下具有很高的电活性。 H0中心的重要见解发现，缺陷的迁移率极高，然后引发与宏观缺陷的显着相互作用。 （C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。 [参考：14]

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