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首页> 外文期刊>Physica status solidi, B. Basic research >A novel AlGaAs/GaAs heterojunction-based Hall sensor designed for low magnetic field measurements
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A novel AlGaAs/GaAs heterojunction-based Hall sensor designed for low magnetic field measurements

机译：一种新颖的基于AlGaAs / GaAs异质结的霍尔传感器，专为低磁场测量而设计

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A self-consistent theoretical analysis, using both Schrodinger and Poisson equations, is made to investigate and propose novel Hall devices based on AlGaAs/GaAs heterostructures. The novel heterostructures are designed and optimized with respect to the measurements of low magnetic field du to their high sensitivity. In this study we attempt to show that the electron mobility of the studied heterostructure may be enhanced without loss in interface electron concentration by both increasing the spacer thickness and by inserting a delta-doping in a narrow quantum well within the AlGaAs barrier where the Al concentration in the well is less than in the barrier. Therefore, we predict a significant enhancement of device sensitivity to low magnetic field without compromise in noise performance. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译：利用Schrodinger和Poisson方程进行了自洽的理论分析，以研究和提出基于AlGaAs / GaAs异质结构的新型霍尔器件。就低磁场的高灵敏度而言，针对低磁场的测量对新型异质结构进行了设计和优化。在本研究中，我们试图表明，通过增加间隔层的厚度以及在AlGaAs势垒内的窄量子阱中插入δ掺杂，既可以增加所研究异质结构的电子迁移率，又不会降低界面电子浓度。在井中比在障碍中少。因此，我们预测器件对低磁场的灵敏度将显着提高，而不会影响噪声性能。 （C）2004 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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