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首页> 外文期刊>Physica status solidi, B. Basic research >Electronic structures of a quantum well of A(1-x)B(x) alloy semiconductor in the coherent potential approximation
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Electronic structures of a quantum well of A(1-x)B(x) alloy semiconductor in the coherent potential approximation

机译：相干势近似下A（1-x）B（x）合金半导体量子阱的电子结构

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摘要

We have theoretically studied the electronic and optical properties of a quantum well (QW) in which the well region is constructed from a binary alloy semiconductor A(1-x)B(lambda) in the coherent potential approximation (CPA). A tight binding model is used for a single particle (electron, hole, Frenkel exciton) in the well composed by a rectangular array of N-x x N-y x N-z sites. The effect of the diagonal randomness is reduced to the coherent potential Sigma(E), which is assumed to be the same for all sites, and is selfconsistently determined with the average Green's function. For a slab (infinity, infinity, N-z) and wire (infinity, N-y, N-z), the density of states Q(E) is composed of N-z (or N-y x N-z) subbands, each shows the two (one)-dimensional van-Hove singularity. When x (or 1 - x) is small, a B (A) impurity-band always appears at the lower (higher) energy side of the lowest (highest) host-band. As the welt width becomes narrower and/or the dimensionality decreases, the boundary for Delta/t decreases which separates the amalgamation type and the persistence type. [References: 6]
机译：我们从理论上研究了量子阱（QW）的电子和光学特性，其中，阱区由二元合金半导体A（1-x）B（λ）以相干势近似（CPA）构造。紧密结合模型用于由N-x x N-y x N-z个位点的矩形阵列组成的孔中的单个粒子（电子，空穴，Frenkel激子）。对角随机性的影响减小到相干势Sigma（E），该势能对所有位置都假定是相同的，并且由平均格林函数自洽确定。对于平板（无穷大，无穷大，Nz）和金属丝（无穷大，Ny，Nz），状态密度Q（E）由Nz（或Ny x Nz）个子带组成，每个子带显示两（一）维范-有奇异之处。当x（或1-x）小时，B（A）杂质带始终出现在最低（最高）主机带的较低（较高）能量侧。随着贴边宽度变窄和/或尺寸减小，Δ/ t的边界减小，这将合并类型和持久性类型分开。 [参考：6]

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