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>ARL-MR-0973 - Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode | U.S. Army Research Laboratory
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ARL-MR-0973 - Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode | U.S. Army Research Laboratory
Thermal simulations were used to calculate temperatures in a silicon carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT),simulating device operation in a DC-DC power converter switching at a frequency of up to 15 kHz. Calculations alsoestimated the effect of solder layers on temperature in the device.
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