The project analyzes semiconductor infrared (IR) detectors and their performance degradation caused by material defects. Newly developed unipolar barrier detectors were compared, both theoretically and experimentally, with the traditional pn- based detector designs. In cases where defect concentrations are significant, e.g., mismatched epitaxial material or radiation damaged material, unipolar barrier devices exhibit superior performance in terms of the magnitude of the dark current and the efficiency of dark current reduction by cooling.
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