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Radiation Effects on Electronics in Aligned Carbon Nanotube Technology (RadCNT)

机译：对准碳纳米管技术（RadCNT）中对电子的辐射效应

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The main objective of the RadCNT program was the characterization of fundamental mechanisms and charge transport phenomena governing the interactions between ionizing and non-ionizing radiation with carbon-based (nanotube and graphene) field-effect transistors (FETs) devices and integrated circuits (ICs). This effort was supported through the fabrication of aligned single-walled carbon nanotubes (SWCNT) FETs at the University of Southern California's (USC) Nanotechnology Research Laboratory and through the collaboration with the Naval Research Laboratories (NRL) for radiation testing and expertise in radiation effects characterization.

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作者
Sanchez Esqueda,Ivan; Cress, Cory D; Zhou,Chongwu; Che,Yuchi; Fu,Yue; Ahlbin,Jonathan;
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年(卷),期 2019(),
年度 2019
页码
总页数 24
原文格式 PDF
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网站名称美国国防技术信息中心
栏目名称所有文件
关键词
complementary metaloxide semiconductors; charge carriers; nanotechnology; logic gates; dielectrics; carrier mobility; chemical vapor deposition; ionizing radiation; carbon nanotubes; radiation effects; field effect transistors; graphene; transport properties;

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Radiation Effects on Electronics in Aligned Carbon Nanotube Technology (RadCNT)

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