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Electron Drift Mobility of Degenerate Semiconductors Due to Ionized Impurity Scattering-Phase 1

机译：离子杂质散射引起的退化半导体的电子漂移迁移 - 第1阶段

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Study of the electron drift mobility of degenerate semiconductors due to ionized impurity scattering and the electron drift mobility of degenerately doped zinc oxide (ZnO). The objectives for Phase I was to derive analytical expressions for the electron mobility of degenerate semiconductors dominated by ionized impurities, including non-parabolic conduction bands, wave function admixture, Rode-Cetnar screening, impurity compensation, and multiply ionized impurities. Also to compare calculated numerical results to results for classical parabolic bands and Thomas-Fermi screening.

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作者
Rode,Daniel;
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年(卷),期 2019(),
年度 2019
页码
总页数 20
原文格式 PDF
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网站名称美国国防技术信息中心
栏目名称所有文件
关键词
semiconductors; impurities; fermi levels; electron mobility; conduction bands; wave functions; energy bands; free electrons; crystal lattice vibrations; electron scattering; electron energy; energy gaps; distribution functions; probability distributions; electric fields;

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Electron Drift Mobility of Degenerate Semiconductors Due to Ionized Impurity Scattering-Phase 1

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