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Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostructure Lasers Utilizing Native Oxide Mirrors

机译：利用天然氧化物反射镜的alGaas-Gaas-InGaas量子阱异质结构激光器的光电泵浦室温边缘和垂直腔体操作

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Data are presented on the 300-K continuous and pulsed photopumped laser operationof A1y Ga(1-y)As-GaAS-InxGa(1-x)As quantum-well heterostructure (QWH) crystals that utilize large-index-step high-contrast distributed Bragg reflector mirrors. The mirrors are formed by selective lateral oxidation (H2O+N2, 425 deg C) of three lower and three upper A1As layers in the structure, resulting in enhanced cavity Q in the vertical direction. The laterally oxidized mirrors, a small lower and an upper stack that sandwich a lateral waveguide and double QW active region, are of sufficient quality to permit vertical-cavity laser operation of the QWH crystals.

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Ries, M. J.; Richard, T. A.; Maranowski, S. A.; Holonyak, N.; Chen, E. I.;
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年度 1994
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总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Heterojunctions; Gallium arsenide lasers; Mirrors; Reprints; Quantum wells; Oxidation; Aluminum arsenides; Bragg scattering; Optical pumping;

机译：异质结;砷化镓激光;反射镜;重印;量子阱;氧化;砷化铝;布拉格散射;光泵浦;

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专利

1. Enhanced hot-carrier spontaneous and stimulated recombination in a photopumped vertical cavity Al_xGa_(1-x)As-GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors [J] . T. A. Richard, S. A. Maranowski, N. Holonyak Jr., Applied Physics Letters . 1995,第5期

机译：具有多个顶部和底部本机氧化镜的光泵化垂直腔Al_xGa_（1-x）As-GaAs量子阱异质结构中增强的热载流子自发和受激复合
2. Room-temperature continuous-wave operation of green vertical-cavity surface- emitting lasers with a curved mirror fabricated on {20-21} semi-polar GaN [J] . Hamaguchi Tatsushi, Hoshina Yukio, Hayashi Kentaro, Annales de l'I.H.P . 2020,第4期

机译：绿色垂直腔表面发射激光器的室温连续波运行，{20-21}半极GaN上制造弯曲镜
3. Room-temperature pulsed operation of 1.3 /spl mu/m vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors [J] . Salet P., Gaborit F. Electronics Letters . 1997,第24期

机译：1.3 / spl mu / m垂直腔激光器的室温脉冲操作，包括底部InGaAsP / InP多层布拉格反射镜
4. Room-temperature continuous-wave operation of all-AlGaAs visible (/spl sim/700 nm) vertical-cavity surface emitting lasers fabricated by selective oxidation [C] . Hou, H.Q., Crawford, . 1996

机译：通过选择性氧化制备的全AlGaAs可见光（/ spl sim / 700 nm）垂直腔表面发射激光器的室温连续波操作
5. Native oxidation of aluminum-bearing III-V semiconductors with applications to edge- and surface-emitting lasers and to the stabilization of light emitting diodes. [D] . Richard, Timothy Allen. 1995

机译：含铝III-V半导体的自然氧化，可应用于边缘发射和表面发射激光器以及发光二极管的稳定化。
6. Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers [O] . Jingzhi Shang, Chunxiao Cong, Zilong Wang, -1

机译：室温2D半导体激活的垂直腔面发射激光器
7. Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors [O] . Zhao, G., Zhang, Y., Deppe, D. G., 2012

机译：埋地异质结构垂直腔面发射激光器半导体镜
8. Visible-Spectrum (lambda = 65O nm) Photopumped (Pulsed, 300 K) Laser Operation ofa Vertical-Cavity AlAs-AlGaAs/InAlP-InGaP Quantum Well Heterostructure Utilizing Native Oxide Mirrors [R] . Ries, M. J., Holonyak, N., Chen, E. I., 1996

机译：可见光谱（λ= 650nm）光电泵浦（脉冲，300K）激光操作垂直腔alas-alGaas / Inalp-InGap量子阱异质结构利用天然氧化物反射镜

Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostructure Lasers Utilizing Native Oxide Mirrors

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