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首页> 美国政府科技报告 >Development of Ultra-Low Noise, High Performance III-V Quantum Well InfraredPhotodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems
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Development of Ultra-Low Noise, High Performance III-V Quantum Well InfraredPhotodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems

机译：开发用于焦平面阵列凝视图像传感器系统的超低噪声，高性能III-V量子阱红外光电探测器（QWIp）

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During this reporting period (11-01-93 to 01-31-94) we have continued to makesignificant progress towards the program goals. We have developed a new normal incidence p-type strained-layer InGaAs/InAlAs QWIP grown on InP by MBE. This PSL QWIP has achieved an ultra-low dark current and very high detectivity at 8.1 micrometers and 77 K. The detector is under background limited performance (BLIP) for T<100 K, which is the highest BLIP temperature ever reported for a QWIP. A dark current density of 7x10(exp -8) A/sq cm and BLIP detectivity of 5.9x10(to the 10 power) Jones were obtained for this QWIP at 77 K. Other tasks performed during this period include: (i) Design, fabrication and characterization of a new two-color stacked BTM and BTC QWIP for 3-5 and 8-12 micrometers IR detection, (ii) design and fabrication and characterization of a normal incidence p-type compressive strained -layer InGaAs/GaAs QWIP grown on GaAs, and (iii) theoretical and experimental studies of parameter optimization for an InGaAs BTM QWIP. Detailed results and accomplishments are described in this report. GaAs/GaAlAs Quantum Well Infrared Photodetectors(QWIPs), p-Type strained-layer InGaAs/GaAs QWIP, Intersubband absorption, Dark current, Responsivity, Detectivity, 2 Color stack QWIP.

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