首页> 美国政府科技报告 >Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures.

【24h】

Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures.

机译：Gaas和alGaas双异质结构的瞬态光致发光测量。

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report a set of transient photoluminescence (TPL) measurements of GaAs and AlGaAs double heterostructure (DH) materials as a function of temperature from 10K to 300K. We also report measurements of the time-integrated photoluminescence spectra of these samples. We observe, in both the spectra and the TPL measurements, evidence that the low-temperature photoluminescence kinetics are affected by additional paths for radiative decay that are not evident at room temperature, but have implications for material qualities measured at room temperature. Transient photoluminescence, GaAs, AlGaAs, Solar cells.

著录项

作者
Halle, L. F.; Moss, S. C.; Marvin, D. C.;
展开▼
作者单位

展开▼
年度 1993
页码 1-11
总页数 11
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Photoluminescence; Solar cells; Aluminum gallium arsenides; Gallium arsenides; Kinetics; Low temperature; Measurement; Transients; Lasers; Double heterostructures; Radiative decay; Carrier lifetimes; Temperature dependence;

机译：光致发光;太阳能电池;砷化铝镓;砷化镓;动力学;低温;测量;瞬态;激光;双异质结构;辐射衰变;载流子寿命;温度依赖性;

相似文献

外文文献
中文文献
专利

1. Effects of electron beam irradiation on transient photoluminescence measurements of GaAs and AlGaAs double heterostructures [J] . Moss S.C., Halle L.F. IEEE Transactions on Nuclear Science . 1995,第6期

机译：电子束辐照对GaAs和AlGaAs双异质结构瞬态光致发光测量的影响
2. Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer [J] . G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, Semiconductors . 2003,第5期

机译：薄AlAs层分隔的AlGaAs / GaAs / AlGaAs双量子阱的光致发光研究
3. Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors [J] . Kuzuhara M., Kim K. IEEE Transactions on Electron Devices . 1989,第1期

机译：AlGaAs / GaAs / AlGaAs和AlGaAs / InGaAs / AlGaAs热电子晶体管的瞬态仿真
4. Transient photoluminescence measurements on GaAs and AlGaAs double heterostructures [C] . Halle, L.F., Moss, . 1993

机译：GaAs和AlGaAs双异质结构的瞬态光致发光测量
5. Photoluminescence and Resonance Raman Spectroscopy of MOCVD Grown GaAs/AlGaAs Core-Shell Nanowires. [D] . Leaffer, Oren D. 2013

机译：MOCVD生长的GaAs / AlGaAs核壳纳米线的光致发光和共振拉曼光谱。
6. Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings [O] . Marco Abbarchi, Lucia Cavigli, Claudio Somaschini, 2011

机译：GaAs / AlGaAs三重同心量子环的微光致发光
7. Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures. [O] . T. Feil, T. Ihn, K. Ensslin, 2016

机译：Gaas / alGaas异质结构中高迁移率二维电子气的选通。
8. Analysis of Transient Photoluminescence Measurements on GaAs and AlGaAs DoubleHeterostructures [R] . Marvin, D. C., Moss, S. C., Halle, L. F. 1993

机译：Gaas和alGaas双层结构的瞬态光致发光测量分析

Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures.

摘要

著录项

相似文献

相关主题

期刊订阅