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Room-Temperature CW Operation at 2.2 micrometers of GaInAsSb/AlGaAsSb DiodeLasers Grown by Molecular Beam Epitaxy

机译：通过分子束外延生长的2.2微米GaInassb / alGaassb二极管激光器的室温CW操作

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Double-heterostructure diode lasers incorporating a GaInAsSb active layer andAlGaAsSb confining layers lattice matched to a GaSb substrate are being developed to provide emission in the 2-5 micrometer spectral range for such applications as optical communications employing fluoride based fibers, laser radar exploiting atmospheric transmission windows, remote sensing of atmospheric gases, and molecular spectroscopy. Such GaInAsSb/AlGaAsSb lasers emitting at wavelengths from 1.8 to 2.5 micrometers have been reported by a number of groups. Room-temperature cw operation of index guided GaInAsSb/AlGaAsSb lasers grown by liquid phase epitaxy (LPE) has been achieved by two groups.

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Choi, H. K.; Eglash, S. J.;
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年度 1991
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总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor lasers; Atmospheres; Atmospheric chemistry; Atmospheric windows; Emission; Epitaxial growth; Fibers; Fluorides; Frequency; Lasers; Layers; Liquid phases; Molecular beams; Molecular spectroscopy; Operation; Optical communications; Optical rad;

机译：半导体激光器;气氛;大气化学;大气窗;发射;外延生长;纤维;氟化物;频率;激光;层;液相;分子束;分子光谱;操作;光通信;光学辐射;

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专利

1. Resonant cavity enhanced heterojunction phototransistors based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy [J] . Yan Shi, Zhao J.H. IEEE Photonics Technology Letters . 1998,第2期

机译：基于分子束外延生长的基于GaInAsSb-AlGaAsSb的谐振腔增强异质结光电晶体管
2. Tunable resonant cavity enhanced photodetectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy [J] . Yan Shi, Zhao J.H. Electronics Letters . 1997,第17期

机译：通过分子束外延生长具有GaInAsSb / AlGaAsSb多量子阱结构的可调谐谐振腔增强光电探测器
3. Quantum confined Stark effect in GaInAsSb/AlGaAsSb quantum wells grown by molecular beam epitaxy [J] . Shi Y., Zhao J.H. Electronics Letters . 1997,第3期

机译：分子束外延生长的GaInAsSb / AlGaAsSb量子阱中的量子受限斯塔克效应
4. High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy [C] . A. T. Tukiainen, L. J. Toikkanen, I. A. T. Hirvonen, Conference on Lasers and Electro-Optics . 2003

机译：高功率2.1 W CW-Operation通过固体源分子束外延生长的650nm激光二极管
5. Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxy. [D] . Reifsnider, Jason Miles. 2003

机译：通过分子束外延生长的退火退火窄带隙氮化物的表征。
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy [O] . Sun Z. Z., Yoon Soon Fatt, Yew K. C., 2005

机译：具有GaasN势垒的GaInNas / Gaas量子点激光器的室温连续波操作，固态分子束外延生长

Room-Temperature CW Operation at 2.2 micrometers of GaInAsSb/AlGaAsSb DiodeLasers Grown by Molecular Beam Epitaxy

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