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首页> 美国政府科技报告 >Formation of Aluminum Oxide Films from Tris(Hexafluoroacetylacetonato)Aluminum(III) and Tris(Trifluoroacetylacetonato) Aluminum (III) in the Substrate Temperature Interval 320 C - 480 C in an Argon Ambient Atmosphere
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Formation of Aluminum Oxide Films from Tris(Hexafluoroacetylacetonato)Aluminum(III) and Tris(Trifluoroacetylacetonato) Aluminum (III) in the Substrate Temperature Interval 320 C - 480 C in an Argon Ambient Atmosphere

机译：三氟（六氟乙酰丙酮）铝（III）和三（三氟乙酰丙酮）铝（III）在氩气氛中320℃ - 480℃的基板温度区间形成氧化铝薄膜

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The object of the present study was to investigate the thermally activated decompositions of the Al(hfa)3 and Al (tfa)3, varying the decomposition temperature, and examining the chemical composition and electrical properties of the obtained deposits. A study of the thermally activated decomposition of Al(hfa)3 (tris(hexafluoroacetylacetonato)aluminum and Al(tfa)3 (tris(trifluoroacetylacetonato)aluminum) in the gas phase is reported. The decomposition process was carried out in an open tube atmospheric pressure reactor in an inert atmosphere of argon for the substrate temperature interval 320C - 480C. In the case of Al(hfa)3, the chemical vapor deposition process resulted in the deposition of aluminum oxide films while the decomposition of Al(tfa)3 led to the deposition of Al2O3 along with significant quantities of carbon. The breakdown strength of Al/Al2O3/Si capacitors with aluminum oxide films prepared from Al(hfa)3 was found to be higher than 3 MV/cm in most cases. The flat band voltage was positive, indicative of apparent negative oxide charge. Keywords: Thin films, Chemical vapor deposition (CVD), Insulators. (KT)

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