Stochastic Process Models in Device Physics.

机译：器件物理中的随机过程模型。

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The aim of this project was to undertake a statistical study of Monte Carlo methods in device physics using tools from the modern theory of probability and stochastic processes. The Monte Carlo approach has been used to obtain numerical estimates of parameters by simulating the physical process on a computer rather than attempting to solve the integrodifferential equations which arise. Thus this method estimates averages and can be applied to any quantity expressible as such but may require an enormous number of simulations before statistically reliable results are obtained, especially if the quantity of interest is subject to very low probability of occurrence. A probabilistic study was undertaken of the behavior of individual electrons, complementing the Monte-Carlo approach. The methodology required the formulation of some novel stochastic processes and suggested new types of conditions for ergodicity of Markov processes. (JHD)

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作者
Hoppe, F. M.;
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年度 1989
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Ergodic processes; Stochastic processes; Differential equations; Electrons; Estimates; Integral equations; Low rate; Markov processes; Mathematical models; Mean; Monte Carlo method; Numerical analysis; Parameters; Physical properties; Probability; Reliability; Simulation; Statistical analysis; Theory;

机译：遍历过程;随机过程;微分方程;电子;估计;积分方程;低速率;马尔可夫过程;数学模型;均值;蒙特卡罗方法;数值分析;参数;物理性质;概率;可靠性;模拟;统计分析;理论;

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Stochastic Process Models in Device Physics.

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